DSAISS00083655.pdf
-
Toshiba
-
GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101A
High Power Switching Applications
Unit: mm
·
Enhancement-Mode
·
High Speed: tf = 0.40 µs (max)
-
Original
-
-
Part pricing, stock, data attributes from Findchips.com