DSA2IH0074708.pdf

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Partial File Text Insulated Gate Bipolar Transistors (IGBT) G series with high gain Type V C S S : 'c : £ 'c ' V C g(ss() ; ^tss " Cre* max* typ. typiv:;2.5 25 2.5 1.8 2.5 1.8 2.5 1.8 3.5 4.0 . TJm = 15° C
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