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DSA0072014.pdf
Manufacturer
Toshiba
Partial File Text
GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm · Fourth-generation IGBT ·
Datasheet Type
Original
ECAD Model
Part Details
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2-10R1C
gt10j321
K2662
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