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DSA0041344.pdf
Manufacturer
Advanced Semiconductor
Partial File Text
3N211 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 3N211 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection Diodes, Used in VHF Low Noise Amplifier Applicat
Type
Original
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3n211
dual-gate
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