DSA2IH00212801.pdf

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Partial File Text I · EP/CTM {Enhanced-Performance Implanted CMOS) Submicron Process · Typical V q l p (Output Ground Bounce) < 0.8 V at Vcc = 3.3 V, TA = 25°C · Typical Vohv (Output Voh Undershoot) > 2 V at Vcc = 3.3
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DSA2IH00212801.pdf preview Download Datasheet