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    DSA00128636.pdf

    • Fujitsu
    • FLK017XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: add = 26%(Typ.) Proven Reliability Drain DESCRIPTION
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    DSA00128636.pdf preview Download Datasheet

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