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    DSAZIHA100083727.pdf

    • Cree
    • CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gai
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    DSAZIHA100083727.pdf preview Download Datasheet

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