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    DSAIHSC000104234.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs (Packaged) Features • High power - P 1dB = 24 dBm at f = 8 GHz • High gain - G-,dB = 8 dB at f = 8 GHz • Suitable for C-Band
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