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DSA00170204.pdf
Manufacturer
Toshiba
Partial File Text
HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 Small footprint due to a
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ECAD Model
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HN4B102J