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    DSA0013569.pdf

    • United Monolithic Semiconductors
    • PH15 0.15µm Ultra Low Noise Process µ Very Low Noise PHFET technology Description - "Pseudomorphic" PM-HEMT technology - 0.15µm gate length - GaAlAs/GaInAs/GaAs epitaxial active layer - 3" w
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    DSA0013569.pdf preview Download Datasheet

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