DSA00748877.pdf
-
Toshiba
-
GT40T102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T102
Parallel Resonance Inverter Switching Applications
Unit: mm · · · Enhancement-mode High speed: tf = 0.25 µs (
-
Original
-
-
Part pricing, stock, data attributes from Findchips.com