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Scans-0072188.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES : â LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level â HIGH POWER P1dB = 36.5 dBm at 6.4 GHz to
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TIM6472-4SL
to 92 case