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DASF0042311.pdf
Manufacturer
Toshiba
Partial File Text
GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm · Third-generation IGBT · Enhancement mode type ·
Type
Original
ECAD Model
Part Details
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GT30J101
GT30J301
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