This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
IPB06CNE8N G
IPI06CNE8N G
IPP06CNE8N G
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
6.2
m
ID
· Excellent gate charge x R DS(on) product (FOM)
V
R DS(on),m
