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    DSAZIHA1000111364.pdf

    • International Rectifier
    • IRFHM831PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 7.8 m Qg (typical) RG (typical) 7.3 0.5 nC ID 40h A (@VGS = 10V) (@Tc(Bottom) = 25°C) : : D
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