This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
IRGP6690DPbF
IRGP6690D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
IC = 90A, TC =100°C
tSC ⥠5µs, TJ(max) = 175°C
G
G
VCE(