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DSAZIHA1000111486.pdf
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International Rectifier
Partial File Text
IRGP4263PbF IRGP4263-EPbF  Insulated Gate Bipolar Transistor C  VCES = 650V  IC = 60A, TC =100°C tSC ï³ï 5.5µs, TJ(max) = 175°C E G VCE(ON) typ. = 1.7V @ IC =
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ECAD Model
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