DSA0010549.pdf by Fairchild Semiconductor

Partial File Text NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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