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DSA0010576.pdf
by Fairchild Semiconductor
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NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A TO-220 MONOLITHIC CONSTRUCTION IN BASE-EMITTER SHUNT RESISTORS INDU
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NPN Transistor TO220 VCEO 60V IC 5a