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    Part Img DSA00375626.pdf by Hitachi Semiconductor

    • HAT2036R Silicon N Channel Power MOS FET Power Switching ADE-208-665B(Z) Target specification 3rd. Edition May 1998 Features · Low on-resistance R DS(on) =12m typ · Capable of 4.5 V gate dr
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    HAT2036R MS-012AA
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