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DSAZIHA1000112485.pdf
by IXYS
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Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE(sat) ï£ 2.7V (Electrically Isolated Tab) ISOPL
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