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DSAZIHA1000112490.pdf
by IXYS
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Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA10N300HV IXBH10N300HV VCES = 3000V IC110 = 10A VCE(sat) ï£ 3.2V TO-263HV (IXBA)
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