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DSA00263845.pdf
by ON Semiconductor
Partial File Text
80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial con
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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User Tagged Keywords
80SQ045N
80SQ045NG
80SQ045NRL
80SQ045NRLG
MBR845
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