DSADA0024463.pdf by RF Micro Devices

Partial File Text TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain
Datasheet Type Original
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Pb Free Unknown
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cellular phone amplifier power control transistor Class AB AMPLIFIER 4W HBT transistor RF2123 TA0012 trw rf transistor

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