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    DSAH00429919.pdf

    • Panasonic
    • Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondar
    • Original
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    DSAH00429919.pdf preview Download Datasheet

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