DSA00378015.pdf by Hitachi Semiconductor

Partial File Text 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features · Low on-resistance R DS(on) = 0.08 typ (at VGS = 10 V, I D = 2.5 A) · 4V gate drive devices.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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