DSASW0071482.pdf by NEC

Partial File Text DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES · Low noise figure and high associated gain NF = 0.45 dB TYP., Ga =
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HS350 m04 marking NE3510 NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A NE3510M04-T2B NEC Ga FET marking L nec microwave sdars