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FLM1414-6F
Internally M atched Power GaAs FETs
FEATURES
· High Output Power: P-idg = 37.5dBm (Typ.) · High Gain: G -j^B = 6.0dB (Typ.) · High PAE: r iadd = 26% (Typ.) · Broad Band: 14.0 ~ 14.5GHz ·
