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    • IXTH14N100 MegaMOSTMFET N-Channel Enhancement Mode V DSS =1000 V = 14 A ID25 RDS(on) = 0.82 Q Symbol v DSS vD 0 H VG S v GSM ^ 0 2 5 d m Test Conditions Tj =25°Cto150°C Tj = 25° C
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