DSAEDA00012700.pdf by Mitsubishi

Partial File Text < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. T
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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