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    DSA0016406.pdf

    • Toshiba
    • GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications · Enhancement-mode · High speed: tf = 0.30 µs (typ.)
    • Original
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    DSA0016406.pdf preview Download Datasheet

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    GT60J321

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