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    DSA00269217.pdf

    • Central Semiconductor
    • PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bondi
    • Original
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    DSA00269217.pdf preview Download Datasheet

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    2N5551 2n5551 chip AL transistor CMPT5551 CP316V CXT5551 CZT5551
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