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DSAIH00048776.pdf
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3 D e ce m b e r1992 Features · 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD (SI) - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day · Latch-up
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ECAD Model
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