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DSA2IH0074667.pdf
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Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability Type Tjm = 150°C > New IXSH 20N60® IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 Tc = 25®C Tc « 90°C PF 40 50 75
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SO 042
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