DSA00271027.pdf by Fairchild Semiconductor

Partial File Text FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200m Features tm General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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