DSA003132.pdf by Dallas Semiconductor

Partial File Text Reliability Report: Process: Metal: DS1808 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer, Gate Ox Thickness: Al / 0.5% Cu / 0.8% Si Cf: Ea: : Summary Data with Chi-Sq
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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