DSA003186.pdf by Unisonic Technologies

Partial File Text UTC MJE13001 NPN EPITAXIAL SILICON TRANSISTOR FEATURES * Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A 1 TO-92 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM
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MJE-13001 MJE13001 MJe13001 TRANSISTOR transistor mje13001 UTC 2025 B