DSA00272225.pdf by ON Semiconductor

Partial File Text NGB8207N Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for
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1505C 8207NG NGB8207N NGB8207NT4G