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Partial File Text w p r A i II L I I C L f J k l l GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE LTE-302-M/LTE-309 FEATURE ·S e le c te d to specific o n -lin e intensity and rad iant intensity ranges. ·L
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FR 309 diode Infrared Phototransistor 302 LTR-5888