DSARS0012595.pdf by M/A-COM

Partial File Text MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features GaN depletion mode HEMT microwave
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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1350 transistor Gan hemt transistor Gan on silicon transistor Gan transistor Hemt transistor L-Band 1200-1400 MHz MAGX-001214-250L00