DSACRA00005924.pdf
- Renesas Electronics
- Preliminary Datasheet RJK6015DPM 600V - 21A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.315 typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C) Low leakage current H
- Original
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