DSA00389266.pdf by Panasonic

Partial File Text Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No second
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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2a DIODE 2SK2129

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