DSADIGA000108121.pdf by Cree

Partial File Text CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Creeâs CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, hig
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

DSADIGA000108121.pdf preview Download Datasheet