DSA00389553.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.0dBm at 9.5GHz to 10.5GHz HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz BROAD BAND
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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