DSADIGA000108129.pdf by California Eastern Laboratories

Partial File Text HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES â¢ Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @
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