DSA00389556.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM0910-5 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED P1dB=37.5dBm at 9.5GHz to 10.5GHz HIGH GAIN HERMETICALL
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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