DSA00389705.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM8596-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 8.5GHz to 9.6GHz HIGH GAIN HERMETIC
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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