DSAE0011838.pdf by Infineon Technologies

Partial File Text PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 960 MHz Description The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 8
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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BCP56 LM7805 LM7805 smd lm7805 specification MARKING SMD transistor R11 PTF080101S TRANSISTOR SMD 2X K transistor smd marking ND