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    DSAE0012511.pdf by Infineon Technologies

    • BSC600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 60 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal le
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    600N25NS BSC600N25NS3 G IEC61249-2-21
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