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    DASF0040596.pdf by Infineon Technologies

    • IPB12CNE8N G IPI12CNE8N G OptiMOS®2 Power-Transistor IPD12CNE8N G IPP12CNE8N G Product Summary Features V DS · N-channel, normal level R DS(on),max (TO252) · Excellent gate c
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    IPD12CNE8N IPP12CNE8N PG-TO220-3
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